Diffusing reflector and manufacture of the same and reflection type display apparatus

ABSTRACT

There is provided a method of manufacturing a diffusing reflector which assures high diffusion efficiency and excellent reflection characteristic for the lighting.  
     First, a resin film having photosensitivity is formed on a substrate  2.  Next, gathering of pillar-shaped bodies isolated each other by the patterning of resin film with the photolithography is provided. Subsequently, the uneven surface layer having the maximum inclination angle under 12° is formed by gently deforming individual pillar-shaped bodies with the heat treatment. Moreover, the gently deformed uneven surface layer is coated with the resin and the flat openings between pillar-shaped bodies arranged discretely are buried to ease the inclination angle. Finally, a metal film  13  formed on the gently deformed uneven surface layer.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a diffusing reflector and method ofmanufacturing the same reflector and moreover a reflection type displayapparatus utilizing the same diffusing reflector.

2. Description of Related Art

A display apparatus utilizing a liquid crystal as an electro-opticallayer is formed in the flat-panel shape characterized in thin and lightweight structure assuring low power consumption. Therefore, such displayapparatus has been developed for wide application field such as adisplay of hand-held devices. An electro-optical substance such asliquid crystal is not self light generating type and displays an imageby selectively transmitting or shielding the external light beam. Suchpassive type display apparatus can be classified into the transmissiontype and reflection type depending on the lighting system. In thetransmission type display apparatus, a panel holding liquid crystal, forexample, as the electro-optical layer between a couple of transparentsubstrates is produced and a light source for lighting (backlight) isarranged at the rear surface of the panel and an image can be observedfrom the front side of panel. In the case of this transmission type, thebacklight is essential and a fluorescent lamp, for example, is used asthe light source. In the case of considering the display apparatus as awhole, since the backlight consumes the greater part of electricalpower, it is not suitable for display of hand-held device. Meanwhile, inthe case of the reflection type, a reflector is arranged at the rearsurface of panel, while external light such as the natural light isincident to the front side and an image can also be observed from thefront side by utilizing the reflected light thereof. Since the lightsource for lighting the rear surface is not used different from thetransmission type, the reflection type display apparatus consumes lessamount of electrical power in comparison with the transmission type andtherefore it is suitable for display of a hand-held device.

In the reflection type display apparatus, display is realized byutilizing the incident light from the peripheral environment, it isessential to aim at improvement of brightness by effectively utilizingthe incident light. Moreover, it is basically required to realizediffusing reflection of the incident light in the panel in order torealize the white display called as so-called paper white. Therefore,the reflection type display apparatus of the related art comprises inmany cases a diffusing reflection layer within the panel. This diffusingreflection layer has the surface including fine unevenness and also hasthe characteristic approximated to the perfect diffusion in order toshow the external appearance of paper white as much as possible.However, it is difficult to conclude that the reflection characteristicis sufficient for practical use and it has been considered a problem ofthe reflection-type display apparatus of the related art to improve thecondition of unevenness from the stages of design and process in view ofimproving the reflection characteristic thereof.

SUMMARY OF THE INVENTION

The present invention is provided with the following means for solvingthe problems of the related art and attaining the objects. Namely,according to the present invention, a diffusing reflector can beproduced by the following processes.

In the first process, a resin film having photosensitivity is formed ona substrate. In the next process, the resin film is patterned by thephotolithography to provide a gathering of pillar-shaped bodies isolatedeach other. Subsequently, in the next process, heat treatment isperformed to allow gentle deformation of individual pillar-shaped bodiesin order to form the layer having uneven surface with the maximuminclination angle under 12°. As the final process, a metal film isformed on the gently modified uneven layer. It is preferable to includethe process in which the gently modified uneven surface layer is coatedwith resin to ease the maximum inclination angle by burying the flatopening between individual pillar-shaped bodies isolated each other.Preferably, individual pillar-shaped bodies are gently modified byconducting the heat treatment at the temperature of about 220°C.Preferably, the resin film is divided by the patterning through thephotolithography to provide a gathering of polygonal pillar-shapedbodies isolated each other. It is also preferable that the resin film isdivided by the patterning so that the size of gap between polygonalpillar-shaped bodies isolated each other becomes almost equal to theminimum resolution of the photolithography.

The present invention includes a structure itself of the diffusingreflector. Namely, the diffusing reflector of the present invention iscomposed of a resin film forming the heaping areas and a metal filmformed on the surface of such heaping areas. Namely, the presentinvention is characterized in that the heaping areas in which themaximum inclination angle is controlled under 12° are formed throughreflow of the resin film composed of gathering of pillar-shaped bodiespatterned each other previously leaving the opening between suchpillar-shaped bodies.

The diffusing reflector produced by the method explained above can becomprised within the reflection type display apparatus. In this case,the reflection type display apparatus is provided, as the basicstructure, with a first transparent substrate arranged in the incidentside, a second substrate joined with the first substrate via thepredetermined gap and is arranged in the opposite side, anelectro-optical layer located in the first substrate side within thegap, a diffusing reflection layer located in the second substrate sidewithin the gap and an electrode for impressing a voltage to theelectro-optical layer formed in at least one substrate among the firstand second substrates. The diffusing reflection layer is composed of aresin film forming the heaping areas and a metal film formed on theheaping areas. As the characteristic of such reflection type displayapparatus, the heaping areas in which the maximum inclination angle iscontrolled under 12° is formed by reflow of the resin film consisting ofgathering of pillar-shaped bodies divided through the patterning keepingthe predetermined opening between pillar-shaped bodies. Preferably, thegentle heaping areas are formed by reflow of resin film consisting ofgathering of the pillar-shaped bodies and then burying the opening withthe other resin film. It is preferable that the opening left after thereflow of the resin film consisting of gathering of pillar-shaped bodiesis buried with the other resin to form the uneven surface having thegentle rolling. In the preferred embodiment of the reflection typedisplay apparatus having such structure, a polarizing plate is arrangedin the first substrate side and the liquid crystal layer which functionsas the (¼)-wavelength plate depending on the voltage impressingcondition is used as the electro-optical layer In this case, the(¼)-wavelength plate is arranged between the polarizing plate and liquidcrystal layer and the liquid crystal layer is composed of the nematicliquid crystal layer having positive dielectric anisotropy and thetwisted alignment. This liquid crystal layer functions as the(¼)-wavelength plate when a voltage is not applied and also loses thefunction of the (¼)-wavelength plate when a voltage is applied.

According to the present invention, in view of improving the reflectioncharacteristic of a diffusing reflector, the inclination angle of thelayer having uneven surface is optimized. Namely, the reflectioncharacteristic of the diffusing reflector can be improved by controllingthe maximum inclination angle to 12° or under. In general, when themaximum inclination angle becomes larger, angular distribution ofreflected light beam is widened. When the maximum inclination angle isunder 12° and particularly located near 10°, the diagonally incidentexternal light increases in the element to be reflected to an observerlocated at the front side of apparatus. Therefore, it has been provedthat bright image can be obtained. When the maximum inclination anglebecomes larger than 12°, the element of reflected light totallyreflected in the panel increases. Therefore such maximum inclinationangle is not preferable.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1E are process diagrams illustrating a manufacturing methodof the diffusion reflector of the present invention;

FIG. 2 is a plan view illustrating a pattern of gathering ofpillar-shaped bodies formed on the diffusing reflector;

FIG. 3 is a schematic diagram illustrating a pattern design methodillustrated in FIG. 2;

FIG. 4 is a graph showing distribution of inclination angle of theuneven surface layer of the diffusing reflector manufactured by themethod of the present invention;

FIG. 5 is a schematic diagram illustrating a measuring system tosimulate the reflection characteristic of the diffusing reflectormanufactured by the present invention;

FIG. 6 is a graph showing the sine wave used in the simulation of thediffusing reflector of the present invention;

FIG. 7 is a graph showing the simulation result;

FIG. 8 is a graph showing the simulation result;

FIG. 9 is a graph showing the simulation result;

FIG. 10 is a graph showing the simulation result;

FIG. 11 is a graph showing the simulation result;

FIG. 12 is a schematic partial sectional view illustrating a preferredembodiment of the reflection type display apparatus comprising thediffusing reflector manufactured by the present invention; and

FIG. 13 is a diagram for explaining operations of the reflection typedisplay apparatus illustrated in FIG. 12.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

A preferred embodiment of the present invention will be explained indetail with reference to the accompanying drawings. FIGS. 1A to 1E areprocess diagrams illustrating a method of manufacturing a diffusingreflector of the present invention. As illustrated in FIG. 1A, asubstrate 2, for example, consisting of glass material or the like isprepared. Next, as illustrated in FIG. 1B, a resin film 11 havingphotosensitivity is formed on the substrate 2. As a resin film 11, aphotoresist, for example, may be used. In this embodiment, a film isformed in the thickness of about 1.0 μm by coating of photoresist withthe spin coating method. Next, in the process (1C), a gathering ofpillar-shaped bodies isolated each other is provided by patterning theresin film 11 with the photolithography. In the photolithography method,exposing process is conducted through irradiation of ultraviolet ray andthereafter the developing process is performed. Adequate irradiationenergy of ultraviolet ray is ranged from 150 mJ to 250 mJ. Whenirradiation energy is less than 150 mJ, the energy is too low and whenit exceeds 250 mJ, the energy is too high, and thereby side etching maybe generated. Subsequently, in the process (1D), individualpillar-shaped bodies are gently deformed through the heat treatment andthereby the layer having uneven surface having the maximum inclinationangle under 12° may be formed. This reflow process is performed, forexample, at about 220° C. Namely, the pillar-shaped bodies are heated upto the temperature higher than the softening point or melting point ofthe resin film 11 and thereby the resin film 11 patterned on thepillar-shaped bodies is once fused and the pillar-shaped bodies aregently deformed through the effect of surface tension. Particularly, theupper end portion of the pillar-shaped body is gently deformed and theangular area is eliminated to provide the desired sloping surface.Moreover, the other resin layer 12 consisting, for example, ofphotoresist, is coated on the gently deformed uneven surface layer andthe flat opening 2 a between pillar-shaped bodies isolated each other isburied to ease the maximum inclination angle. Therefore, since the flatarea is eliminated from the uneven surface layer formed on the surfaceof substrate 2, there is no fear for generation of mirror-surfacereflection. Reflection brightness of the diffusing reflector observedfrom the front surface direction can be improved by suppressingmirror-surface reflection. This resin 12 is coated in the thickness, forexample, of about 500 nm. This resin 12 should preferably havephoto-sensitivity. When the resin 12 has the photosensitivity, the resin12 may be patterned in the post-process and various processes may beperformed when the diffusing reflector is comprised in the panel.Finally, in the process (1E), the metal film 13 can be formed on thegently deformed uneven surface having the eased maximum inclinationangle. Therefore, a diffusing layer 10 consisting of the resin film 11and the metal film 13 laid over the resin film can be formed. Thediffusing reflector 10 has a structure that a diffusing reflection layer10 is formed on the substrate 2. The metal film 13 is formed bydepositing a metal material, for example, such as aluminum, silver orthe like on the substrate 2 by the sputtering or vacuum evaporation.

FIG. 2 is a schematic plan view illustrating pillar-shaped bodiesisolated each other by patterning the resin film with thephotolithography. In this embodiment, gathering of polygonalpillar-shaped bodies isolated each other by the divisional patterning ofthe resin with the photolithography is provided. The divisionalpatterning of resin film is conducted in such a manner that size of gapbetween the polygonal pillar-shaped bodies isolated each other becomesalmost equal to the minimum resolution of photolithography. In order toimprove reflection characteristic of the diffusing reflector, thepattern having uneven layer is important as well as the maximuminclination angle of the uneven surface layer. Namely, a pillar-shapedbody having the uneven surface layer as the unit shape of the diffusingreflector is determined in its shape by the mask pattern to be used forthe photolithography High density of uneven layer is essential forimprovement of brightness of the diffusing reflector. Focusing on thispoint, the unit shape of the uneven surface layer to be depicted on themask pattern is determined as polygonal shape in the present inventionand thereby the uneven layer of the diffusing reflector is formed inhigher density.

FIG. 3 is a schematic diagram illustrating an example of a mask patterndesign method. As illustrated in the figure, circles in diameter of 11μm, for example, are drawn to be in contact with each other. Next,boundaries of the circles in contact condition are connectedcontinuously with straight lines and are then isolated each other. Theisolated boundary width for isolation, namely the size of gap betweenneighboring polygonal pillar-shaped bodies is set to about 1 μm which isalmost equal to the minimum resolution of the photolithography process.Diameter of the basic circle is 11 μm in average and size of gap betweenthe polygonal pillar-shaped bodies obtained is 1 μm. Even when thedensity of mask pattern is changed, rise of density of polygons resultsin, on the contrary, increase of the maximum inclination angle becausethe minimum value of the distance between the neighboring polygonalpatterns is determined by the resolution. In order to obtain the goodreflection characteristic, it is essential to control the maximuminclination angle to a value under 12°. Particularly, the preferableangle is about 10°. It has been proved-by experiments that the maximuminclination angle can be obtained by setting the diameter of unit circleto about 11 μm and the size of gap between the neighboring polygons to 1μm which is almost equal to the minimum resolution of thephotolithography.

Optimization of the inclination angle of the uneven surface layer can becontrolled not only by mask pattern design but also by the process. Asexplained above, the photoresist is coated by the spinning method in thethickness, for example, of 1.0 μm and it is then exposed and thendeveloped by the irradiation energy of 150 mJ or more using the maskillustrated in FIG. 2. Here, heat treatment is performed for an hourunder the temperature of 220° C. for the purpose of reflow. Thereafter,the resin consisting, for example, of photoresist is spin-coated in thethickness of about 500 nm. After the baking, metal aluminum or silver,for example, is sputtered in the thickness of 400 or 500 nm.

Angular distribution of the diffusing reflector obtained under theconditions explained above is shown in FIG. 4. The graph of FIG. 4 showsthe distribution of inclination angles of the uneven surface layers of acouple of samples indicated by black circle and black square. In anysample, the inclination angles are distributed under 12° and it can beunderstood that the maximum inclination angle of the uneven surfacelayer can be controlled to a value under 12°.

As explained above, according to the present invention, the maximuminclination angle of the uneven surface layer is controlled to the angleunder 12° in order to improve the reflection characteristic of thediffusing reflector by improving manufacturing process and mask pattern.As will be explained below, the diffusing reflector just suitable forthe reflection type display apparatus can be attained by controlling themaximum inclination angle to 12° or preferably to about 10°. It is aneffect of simulation. FIG. 5 illustrates the direction of an observerset in the simulation. Considering the actual application environment,it is assumed that the external lighting beam is incident from the upperdirection of panel in the incident angle of 30° for the normal line andan observer is looking at the panel 0 along the normal line. The panel 0has a flat structure holding the liquid crystal layer 3, for example, asthe electro-optical layer between a couple of substrates 1, 2.

As shown in FIG. 6, as a precondition of simulation, the sectional shapeof the uneven surface of the diffusing reflector is approximated by thetrigonometric function and its only one period is considered here. Whenwavelength of trigonometric function is kept constant and amplitude ischanged, the differential coefficient reflecting the inclination angleis naturally varied and the maximum value of its absolute value can beobtained as θ=0.2π, for example, in the case of sine wave. It is assumedthat the inside of panel is filled with liquid crystal, such inclinationangle as not generating multiple-scattering is considered and moreoverthe incident angle of light is set to 27° or 33° corresponding to theactual light source of the measuring system. Here, reflection angle θdobserved from the normal line direction is considered in such a casethat the light is incident to the uneven pattern of which sectional viewis indicated by the sine wave as shown in FIG. 6. A profile of thesectional view of the uneven surface is defined, for example, asf(x)=R·sin2πx. When considering refraction of the liquid crystal layer,it is enough to process the incident angle θ in of the lighting beam inthe range of ±42° for the normal line direction and the amplitudecondition for such range can be attained as R=0.177 or less by the briefcalculation. The reflection angle θd in this system is given asθd=π/2−θin+arctan(2 πR·cos2 πx). Here, x changes in the range from 0to 1. X is plotted in the graduation of 0.01 and the incident anglerange of incident light beam is taken in the range from 68.7° to 72.4°,considering the refraction of liquid crystal. The distribution of angleθd (degree) when R is changed as a parameter under this condition isshown by the graphs of FIG. 7 to FIG. 11. In these graphs, the maximuminclination angle is indicted as a parameter in place of the value of Rfor easier understanding.

FIG. 7 shows the data of mirror-surface reflection. The distribution ofreflection angle (Degree) shows the flat maximums between 27° and 33°indicating extremely stronger directivity. FIG. 8 shows distribution ofreflection angle when the maximum inclination angle is 5°. Peaks aregenerated at the reflection angles of about 15° and 45°. FIG. 9 showsthe data when the maximum inclination angle is 7°. The reflection angleis scattered to 60° from 10°. FIG. 10 shows the data when the maximuminclination angle is 10° and the higher peak is appearing at thereflection angle of 0°. Namely, the diagonal incident light deviatedfrom the normal line direction is reflected in the direction of frontsurface to reach an observer. Thereby, bright display can be obtained.FIG. 11 shows the data when the maximum inclination angle is 12°. As isapparent from the above graphs, when the maximum inclination anglebecomes larger, angular distribution of the reflected light is widened,but these graphs suggest that when the maximum inclination angle is 10°,the light bean is reflected most effectively toward an observer. Whenthe maximum inclination angle is 12° or larger, a large amount of lightbeam is reflected totally at the boundary of the substrate 1 in theopposite side and the liquid crystal layer 3. Based on the abovesimulation, the maximum inclination angle of the uneven surface layer ofthe present invention is set under 12° and preferably to the angle ofabout 10°.

FIG. 12 is a schematic partial sectional view illustrating a practicalexample of the reflection type display apparatus of the presentinvention. In this example, TN-ECB (Twist Nematic-ElectricallyControlled Birefringence) mode liquid crystal panel 0 is used. As isillustrated, a polarizing plate 70, for example, of polymer film havingoptical anisotropy and a (¼)-wavelength plate 80 are arranged at thesurface of the panel 0 of the reflection type display apparatus of thepresent invention. The panel 0 is formed by joining a first substrate 1consisting, for example, of the transparent glass plate located at theincident side of the external light beam and a second substrate 2, forexample, consisting of glass plate located at the opposite side via thepredetermined gap. At the gap between both substrates 1, 2, the nematicliquid crystal layer 3, for example, is held as the electro-opticallayer. The liquid crystal molecules 4 are provided under the twistedalignment by the upper and lower alignment films (not illustrated), forexample, consisting of polyimide. Electrodes consisting, for example, ofITO are respectively formed at the internal surfaces of the substrates1, 2 to apply the voltage to the nematic liquid crystal layer 3 in everypixel. This embodiment is so-called an active matrix type in which anopposite electrode 7 is formed in the side of the first substrate 1,while a pixel electrode (13) is formed in the side of the secondsubstrate 2. The pixel electrode is driven by a switching elementconsisting of a thin film transistor 50 composed, for example, ofpolysilicon. The opposite electrode 7 and pixel electrode are providedopposed with each other, defining pixels between these electrodes. Atthe internal surface of the second substrate 2 located in the oppositeside, the diffusing reflection layer 10 is formed depending on thepresent invention. The diffusing reflection layer 10 is composed of thestacked layer of resin films 11, 12 and metal film 13. In thisembodiment, the metal film 12 is also working as the pixel electrode.The reflection type display apparatus of the structure explained aboveis of the TN-ECB system in the normally white mode. Namely, when novoltage is applied, the nematic liquid crystal layer 3 functions as the(¼)-wavelength plate by maintaining the twisted alignment and performswhite display by allowing the external light beam to pass in cooperationwith the polarizing plate 70 and the (¼)-wavelength plate 80. When thevoltage is applied, the nematic liquid crystal layer 3 shifts to thevertical alignment and loses the function as the (¼)-wavelength plateand performs black display by shielding the external light beam incooperation with the polarizing plate 70 and (¼)-wavelength plate 80.

Subsequently, referring to FIG. 12, each structural element will beexplained below. As is already explained above, a polarizing plate 70 isarranged at the surface of the first substrate 1 of the panel 0.Moreover, the (¼)-wavelength plate 80 is also provided between thepolarizing plate 70 and first substrate 1. This (¼)-wavelength plate 80is formed, for example, of a polymer film of which one axis is extendedin order to give a phase difference as much as (¼)-wavelength betweenthe normal light beam and irregular light beam. An optical axis of the(¼)-wavelength plate 80 is arranged to form the angle of 45° for thepolarizing axis (transmitting axis) of the polarizing plate 70. Theexternal light beam passes the polarizing plate 70 to become thelinearly polarized light beam. The linearly polarized light beam passesthe (¼)-wavelength plate 80 to become the circularly polarized lightbeam. Moreover, when this light beam passes again the (¼)-wavelengthplate, it is converted to the linearly polarized light beam. In thiscase, polarizing direction is rotated for 90° from the originalpolarizing direction. As explained above, the (¼)-wavelength plate canrotate the polarizing direction in combination with the polarizing plateand uses this process for the display function.

The panel 0 basically uses; as the electro-optical layer, the nematicliquid crystal layer 3 consisting of the nematic liquid crystal molecule4 having horizontally aligned positive dielectric anisotropy. Thisnematic liquid crystal layer 3 functions as he (¼)-wavelength plate bysetting its thickness to adequate value. In this embodiment, the nematicliquid crystal layer 3 has the refractive index anisotropy Δn of about0.7 and thickness of the nematic liquid crystal layer 3 is about 3 μm.Therefore, retardation Δn·d of the nematic liquid crystal layer 3becomes 0.2 to 0.25 μm. As is illustrated in the figure, since thenematic liquid crystal molecule 4 is provided through the twistedalignment, a substantial value of the retardation becomes about 0.15 μm(150 nm). This value is almost equal to ¼ of the center wavelength(about 600 nm) of the external light beam and thereby the nematic liquidcrystal layer 3 is capable of optically functioning as the(¼)-wavelength plate. The wanted twisted alignment can be attained byholding the nematic liquid crystal layer 3 with the upper and loweralignment films. In the side of the first substrate 1, the liquidcrystal molecule 4 is provided on the line along the rubbing directionof the aligned film and the liquid crystal molecule 4 is also providedon the line along the rubbing direction of the aligned film also in theside of the second substrate 2. The wanted twisted alignment can beattained by shifting the rubbing direction of the upper and loweraligned films as much as 60° to 70°.

A color filter 9 is formed in the side of the transparent firstsubstrate 1 consisting, for example, of negative resist in which pigmentis dispersed. Meanwhile, a diffusing reflection layer 10 is formed inthe side of the second substrate located in the reflecting side. Thediffusing reflection layer 10 is provided with the uneven surface layerhaving the light scattering characteristic. Therefore, this layer showsthe external appearance of paper white and accordingly not only it issuitable for display of background but also the viewing angle is widenedto assure easy display and brightness of display increases in the widerviewing range. As is illustrated in the figure, the diffusing reflectionlayer 10 is composed of resin films 11, 12 forming gentle heaping areasand the metal film 13 formed on the surfaces thereof. As is explainedpreviously, the metal film 13 is also working as the pixel electrode.The diffusion reflection layer 10 is formed conforming to the presentinvention and is provided with the uneven surface layer having thegentle heaping areas by the reflow of resin film 11 consisting ofgathering of pillar-shaped bodies previously and discretely patternedleaving the opening. Moreover, the opening being left is buried with theother resin film 12 after the reflow of the resin film 11 consisting ofthe gathering of the pillar-shaped bodies. The maximum inclination angleof the uneven surface layer is controlled to the angle under 12°.

A thin film transistor 50 for driving the pixel electrode is integratedand formed on the surface of the second substrate 2. The thin filmtransistor 50 has a bottom gate structure in the stacking structure inwhich the gate electrode 51 consisting, for example, of Mo, double-layergate insulating films 52, 53 consisting, for example, of SiO₂ and SiN,and semiconductor thin film 54 consisting, for example, ofpolycrystalline silicon are sequentially stacked from the lower side.The thin film transistor has the double-gate structure including acouple of gate electrodes 51. A channel area is provided in the area ofthe semiconductor thin film 54 located just on each gate electrode 51.Each channel area is protected by a stopper 55. An auxiliary capacitance60 is also formed in the same layer structure as this thin filmtransistor 50. The thin film transistor 50 and auxiliary capacitance 60having the structure explained above are covered with an interlayerinsulating film 59 consisting, for example, of PSG. On the interlayerinsulating film 59, a contact hole communicating with the source areaand drain area of the thin film transistor is opened. On this interlayerinsulating film 59, a wiring 57 consisting, for example, of Al is formedand is connected to the source area and drain area of the thin filmtransistor 50 via the contact hole. The wiring 57 is covered with theresin film 12 explained above. Moreover, the pixel electrode (13)explained above is patterned. The pixel electrode is electricallyconnected to the drain area of the thin film transistor 50 via thecontact hole opened to the resin film 12 and the wiring 57.

Referring to FIG. 13, operations of the reflection type displayapparatus illustrated in FIG. 12 will be explained. In this figure,(OFF) indicates the condition in which a voltage is not applied and(ON), the condition in which a voltage is being applied. As illustratedin the condition (OFF), the reflection type display apparatus of thepresent invention is formed by sequentially stacking the polarizingplate 70, (¼)-wavelength plate 80, nematic liquid crystal layer 3 anddiffusing reflection layer 10 from the observer side. The polarizingaxis (transmission axis) of the polarizing plate 70 is defined as 70P.The optical axis 80S of the (¼)-wavelength plate 80 is forming the angleof 45° for the transmission axis 70P. Moreover, the alignment direction3R of the liquid crystal molecule 4 in the side of first substrate isparallel to the polarizing axis (transmission axis) 70P of thepolarizing plate 70.

The incident light 201 is converted to the linearly polarized light 202when it passes through the polarizing plate 70. The polarizing directionis parallel to the transmission axis 70P and such polarization ishereinafter called the parallel linear polarization. The parallellinearly polarized light 202 is then converted to the circularlypolarized light 203 when it passes through the (¼)-wavelength plate 80.The circularly polarized light 203 is then converted to the linearlypolarized light when it passes through the nematic liquid crystal layer3 functioning as the (¼)-wavelength plate. However, the polarizingdirection of the linearly polarized light rotates for 90° toorthogonally cross the parallel linearly polarized light 202.Hereinafter, this polarization is hereinafter called the orthogonallinear polarization. The orthogonal linear polarized light 203 isreflected by the diffusing reflection layer 10 and passes again thenematic liquid crystal layer 3 functioning as the (¼)-wavelength plateto become the circularly polarized light 20-4. The circularly polarizedlight 204 passes moreover the (¼)-wavelength plate 80 and thereby it isconverted to the original parallel linearly polarized beat 205. Thisparallel linearly polarized light 205 passes the polarizing plate 70 andthen reaches the observer as the output light 206 resulting in whitedisplay.

In the condition (ON) where a voltage is being applied, the liquidcrystal molecule 4 is shifted to the vertical alignment from the twistedalignment, losing the function as-the (¼)-wavelength plate. The externallight 201 having passed the polarizing plate 70 is converted to theparallel linearly polarized light 202. The parallel linearly polarizedlight 202 is converted to the circularly polarized light 203 when itpasses through the (¼)-wavelength plate 80. The circularly polarizedlight 203 passes in direct through the nematic liquid crystal layer 3and is then reflected by the diffusing reflection layer 10 and thenreaches the (¼)-wavelength plate 80 as the circularly polarized light204 a. Here, the circularly polarized light 204 a is converted to theorthogonal linearly polarized light 205 a. The orthogonal linearlypolarized light 205 a cannot pass through the polarizing plate 70,resulting in black display.

According to the present invention, the diffusing reflector can bemanufactured by the processes of forming a resin film havingphotosensitivity on a substrate, providing gathering of pillar-shapedbodies isolated each other by the patterning of resin film withphotolithography, forming layer having the uneven surface with themaximum inclination angle under 12° by gently deforming individualpillar-shaped bodies through the heat treatment and forming a metal filmon the gently deformed uneven surface layer. The reflection brightnessobserved from the front surface can be improved and the optimum designto improve display quality can be realized by comprising such diffusingreflector into the reflection type display apparatus

1. Method of manufacturing a diffusing reflector comprising theprocesses of: preparing for a substrate; forming a resin film havingphotosensitivity on said substrate; providing gathering of pillar-shapedbodies isolated each other through patterning of said resin film withthe photolithography; forming uneven surface layer having the maximuminclination angle of under 12° by gently deforming individual saidpillar-shaped bodies through the reflow; and forming a metal film ongathering of said gently deformed uneven surface layer.
 2. Method ofmanufacturing a diffusing reflector as claimed in claim 1, wherein saidmaximum inclination angle is about 10°.
 3. Method of manufacturing adiffusing reflector as claimed in claim 1, comprising a process ofalleviating said maximum inclination angle by coating said gentlydeformed uneven surface layer with resin to bury the flat openingbetween said uneven surface layers isolated each other.
 4. Method ofmanufacturing a diffusing reflector as claimed in claim 1, wherein saidreflow process is the heat treatment under the temperature of about 220°C.
 5. Method of manufacturing a diffusing reflector as claimed in claim1, wherein gathering of polygonal pillar-shaped bodies isolated eachother by the divided patterning of said resin film by saidphotolithography is provided.
 6. Method of manufacturing a diffusingreflector as claimed in claim 5, wherein said resin film is patterned bythe divided patterning means so that size of gap between said polygonalpillar-shaped bodies isolated each other is almost equal to the minimumresolution of photolithography.
 7. Diffusing reflector comprising;substrate; resin film forming heaping areas; metal film formed on saidresin film; wherein said resin film forming heaping areas can beattained by reflow of gathering of pillar-shaped bodies previouslyisolated each other leaving openings through the patterning and themaximum inclination angle of said heating areas is controlled under 12°.8. Diffusing reflector as claimed in claim 7, wherein said maximuminclination angle is about 10°.
 9. Diffusing reflector as claimed inclaim 7, wherein size of said opening of said pillar-shaped bodies isalmost equal to the minimum resolution of photolithography. 10.Diffusing reflector as claimed in claim 7, wherein gently heaped areasare formed by burying the gaps being left with the other resin filmafter reflow of said resin film consisting of gathering of pillar-shapedbodies.
 11. Diffusing reflector as claimed in claim 7, wherein saidreflow is the heat treatment under the temperature of about 220° C. 12.Diffusing reflector as claimed in claim 7, wherein the cross-sectionalview of said resin film forming the heaping areas is a polygonal shape.13. Reflection type display apparatus comprising: transparent firstsubstrate to be arranged in the incident side; second substrate to becoupled with said first substrate via the predetermined gap and arrangedin the reflection side; electro-optical layer located in said substrateside within said gap; diffusing reflection layer located in the secondsubstrate side within said gap; and electrode formed at least one ofsaid first substrate and second substrate for application of voltage tosaid electro-optical layer; wherein said diffusing reflection layer iscomposed of a resin film forming heaping areas can be attained by thereflow of gathering of pillar-shaped bodies isolated each otherpreviously patterned leaving openings and the maximum inclination angleof the heating areas is controlled under 12°.
 14. Reflection typedisplay apparatus as claimed in claim 13, wherein said maximuminclination angle is about 10°.
 15. Reflection type display apparatus asclaimed in claim 13, wherein size of said opening of said pillar-shapedbodies is almost equal to the minimum resolution of photolithography.16. Reflection type display apparatus as claimed in claim 13, whereingentle heaping areas are formed by conducting the reflow process to saidresin film consisting of gathering of pillar-shaped bodies and thenburying the openings being left with the other resin.
 17. Reflectiontype display apparatus as claimed in claim 13, wherein said reflowprocess is the heat treatment under the temperature of about 220° C. 18.Reflection type display apparatus as claimed in claim 13, whereincross-sectional view of said resin film forming the heaping areas ispolygonal shape.
 19. Reflection type display apparatus as claimed inclaim 13, wherein a polarizing plate is provided in said first substrateside and a liquid crystal layer having the function as the(¼)-wavelength plate depending on the voltage application condition isused as an electro-optical layer.
 20. Reflection type display apparatusas claimed in claim 13, wherein a (¼)-wavelength plate is providedbetween said polarizing plate and said liquid crystal layer said liquidcrystal layer is composed of nematic liquid crystal layer havingpositive dielectric anisotropy and twisted alignment and also functionsas the (¼)-wavelength plate when a voltage is not applied or loses thefunction of the (¼)-wavelength plate when a voltage is applied.